Kinetic Effects in the Chemistry of Diamond CVD Source Gases and Implications forDiamond Growth

摘要

Perfectly stirred reactor calculations have been carried out on six different gasmixtures containing ethanol, water, methane, acetylene, oxygen, and hydrogen at conditions typical of low-pressure (approx. 1 Torr) diamond chemical vapor deposition (CVD) reactors. For reactors operating under conditions in which the flow or diffusive time scales are short compared to the chemical time scales, the selection of viable source-gas mixtures for diamond growth based solely on the overall C-H-O stoichiometry becomes impossible and kinetic effects must be taken into account. Numerical results are presented which show the dependence of the maximum theoretical diamond deposition rate and diamond quality as a function of mass flow rate.