In-Situ UHV Low Temperature Ballistic-Electron-Emission Microscope for nm-ScaleImaging and Spectroscopy of Novel Compound Semiconductor Materials

摘要

This report summarizes the status of development of a new in situ, UHV lowtemperature Ballistic Electron Emission Microscope (BEEM) for study of localized transport through metal semiconductor heterostructures. Phase 1, which involves the development of UHV BEEM capability at room temperature, is fully functional at UCSB, and is yielding excellent BEEM imaging data. Phase II, which involves low temperature operation (Liquid N2) is also installed at UCSB and is in final stages of testing. Phase III, which involves an in situ evaporation chamber, is in final stages of assembly at Surface/Interface Inc. The UHV BEEM data already show that this will provide a unique materials characterization capability for electronic materials researchers at UCSB.