首页> 美国政府科技报告 >Unusually Wide Plateau of the Quantum Hall Effect in a Quad Bilayer Hole System Inside the p-GeSi/Ge/p-GeSu Quantum Well.
【24h】

Unusually Wide Plateau of the Quantum Hall Effect in a Quad Bilayer Hole System Inside the p-GeSi/Ge/p-GeSu Quantum Well.

机译:在p-Gesi / Ge / p-Gesu量子阱内的四层双层孔系统中的量子霍尔效应的异常宽的高原。

获取原文

摘要

An unusually wide plateau of the integer quantum Hall effect (for the filling factor nu = 1) has been revealed in a wide p-GeSi/Ge/p-GeSi quantum well. This plateau exists in one of two metastable states of the sample, for which a symmetric quasi-double-quantum-well system is formed inside the Ge layer due to the hole-hole repulsion. The plateau exists not only within a magnetic field range corresponding to the quantum-Hall liquid, but extends beyond it into a so-called quantized Hall insulator phase. According to the existing theories. this extra wide plateau may be indicative of a kind of disorder. characterized by a certain distribution of fluctuations in their size and carrier density.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号