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Unusual Landau level pinning and correlated ν = 1 quantum Hall effect in hole systems confined to wide GaAs quantum wells

机译:限于宽GaAs量子阱的空穴系统中异常的Landau能级钉扎和相关的ν= 1量子霍尔效应

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摘要

In two-dimensional hole systems confined to wide GaAs quantum wells, where the heavy- and light-hole states are close in energy, we observe a very unusual crossing of the lowest two Landau levels as the sample is tilted in a magnetic field. At a magic tilt angle θ approx= 34°, which surprisingly is independent of the well width or hole density, in a large filling factor range near ν = 1, the lowest two levels are nearly degenerate as evidenced by the presence of two-component quantum Hall states. Remarkably, a quantum Hall state is seen at ν = 1, consistent with a correlated ψ_Ⅲ state.
机译:在局限于宽GaAs量子阱的二维空穴系统中,重空穴和轻空穴态的能量接近,当样品在磁场中倾斜时,我们观察到最低的两个Landau能级非常不寻常的交叉。在神奇的倾斜角θ大约= 34°时(出人意料地与井宽或井眼密度无关),在ν= 1附近的大填充因子范围内,最低的两个水平几乎退化了,这是由两组分的存在所证明的量子霍尔状态。值得注意的是,在ν= 1处看到了一个量子霍尔状态,与相关的ψ_Ⅲ状态一致。

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  • 来源
    《Physical review》 |2015年第19期|195156.1-195156.5|共5页
  • 作者单位

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    magnetoresistance; quantum wells;

    机译:磁阻量子阱;

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