机译:限于宽GaAs量子阱的空穴系统中异常的Landau能级钉扎和相关的ν= 1量子霍尔效应
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;
magnetoresistance; quantum wells;
机译:限于GaAs量子阱的空穴系统在v = 1/2时的分数量子霍尔效应
机译:限于对称宽GaAs量子阱的电子系统中v = 1/2分数量子霍尔效应的稳定性的相图
机译:二维空穴系统第二Landau能级中分数量子霍尔态的粒子-空穴不对称性
机译:GaAs低维系统中量子限制Stark效应对Landau能级的影响
机译:高磁场下的强烈相关系统:混合Landau水平分数量子霍尔效应的描述
机译:强倾斜磁场中级联GaAs / AlGaAs量子阱结构的Landau能级系统中的子带太赫兹跃迁
机译:不寻常的Landau等级固定和相关$ \ nu = 1 $量子霍尔效应 孔系统局限于宽Gaas量子阱
机译:在p-Gesi / Ge / p-Gesu量子阱内的四层双层孔系统中的量子霍尔效应的异常宽的高原。