Patterned Self-Assembly in Non-Stoichiometric Semiconductors

摘要

This Final Report covers the research on two projects: self-assembly by controlled precipitation and thin lateral oxide barrier fabrication. We obtained several important experimental findings that demonstrate the practicality of these techniques for high-throughput nanostructure fabrication. Three of our findings demonstrated experimentally the capabilities of the controlled precipitation process and the fourth increased understanding of the mechanism. We also characterized and compared oxides produced by two thin lateral oxide barrier fabrication processes.