首页> 外国专利> METHOD OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE AND METHOD OF FORMING POROUS DIELECTRIC LAYER (METHOD OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE, AND THEN FORMING POROUS DIELECTRIC)

METHOD OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE AND METHOD OF FORMING POROUS DIELECTRIC LAYER (METHOD OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE, AND THEN FORMING POROUS DIELECTRIC)

机译:形成自组装纳米结构的方法和形成多孔介电层的方法(形成自组装纳米结构的方法,然后形成多孔介电体)

摘要

PROBLEM TO BE SOLVED: To provide a method of patterning a self-assembly nano-structure, and then forming a porous dielectric layer.;SOLUTION: In one aspect, the method of patterning a self-assembly nano-structure and forming a porous dielectric includes a step of providing a hardmask layer over an underlying layer; a step of predefining an area with a photoresist layer on the hardmask layer that is to be protected during the patterning; a step of forming a copolymer layer over the hardmask layer and the photoresist layer; a step of forming the self-assembly nano-structure from the copolymer layer; and a step of etching to pattern the self-assembly nano-structure.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种对自组装纳米结构进行构图,然后形成多孔介电层的方法。解决方案:一方面,对自组装纳米结构进行构图并形成多孔介电层的方法包括在下面的层上提供硬掩模层的步骤;在构图期间要保护的硬掩模层上预定义带有光刻胶层的区域的步骤;在硬掩模层和光致抗蚀剂层上形成共聚物层的步骤;由共聚物层形成自组装纳米结构的步骤; ;并进行刻蚀以对自组装纳米结构进行构图的步骤。;版权所有:(C)2009,日本特许厅

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