Gate-dependent Pseudospin Mixing in Graphene/boron Nitride Moire Superlattices.

摘要

Electrons in graphene are described by relativistic Dirac Weyl spinors with a two-component pseudospin. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone, nomalous quantum Hall effect, and Klein tunnelling, in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sublattices at the atomic level. Graphene/boron nitride moir superlattices, where a fast sublattice oscillation due to boron and nitrogen atoms is superimposed on the slow moire period, provides an attractive approach to engineer the electron pseudospin in graphene.