Extra Thin Silicon Film Structures For Post Silicon Microelectronics

摘要

This report results from a contract tasking Institute of Semiconductor Physics as follows: The contractor will investigate (experimentally and theoretically) the thermo-dynamical limitation for stability of the extra-thin monocrystalline Si films with different crystallographic orientation on different wafers produced by hydrogen transfer during the first year; will create XT Si layers on handle wafers with delta doped layer saturated and oversaturated by boron and germanium and investigate their properties during the second year; and form EXTF structures on a ceramics instead of semiconductor substrates. The objectives of this project are: the formation of extra thin (XT, 1 nm) and ultra thin (UT, 10 nm) single crystal (100), (110), and (111) silicon films with atomically flat interfaces with substrate (handle wafers based on different materials) by means of hydrogen induced transfer after the bonding of Si donor to handle wafers and investigation of basic processes, which determine the position of splitting plane for semiconductor donor wafer with decrease in hydrogen ion energy and transferred film thickness as well as; the formation of XT and UT single crystal Si films with atomically flat interface and surface using weak delta doped layer transfer technique and investigation of roughness evolution by AFM and SEM; and the formation of strained XTSF structures and investigation of quantum confinement and dopant distribution effects on two dimensional free carrier transport in XT and sXTSF test structures.