Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures.

摘要

In this project, we designed and engineered hetero-interfaces of 2-dimensional (2D) van der Waals (vdW) materials for the realization of novel quantum electronic states. We employed molecular beam epitaxy (MBE) combined with nanofabrication techniques to form functional nanostructures that can be utilized for new electronic device applications. We have demonstrated growth of topological insulator, Bi2Te3 on the surface of hBN single crystals by MBE method. We also use transmission electron microscopy (TEM) analysis for the structural of the atomically sharp interface between hBN and Bi2Te3. Finally, we have developed unprecedentedly clean graphene supercoductor junctions that allowed to study transport across the van der Waals interface between the conductor and superconductor. Our observation of gate tunable transitions between retro intraband and specular interband Andreev reflections opens a new route for future experiments that could employ the gate control of the Cooper pair injection process.