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FINAL REPORT FOR THE RESEARCH AND DEVELOPMENT OF HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS

机译:高电流和高压硅控整流器研究和开发的最终报告

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摘要

This final report covers the research and development conducted to obtain high-current, high-voltage silicon controlled rectifiers, Device C, under Navy Department Contract NObsr-87648, project serial number SF-013-11-05. The design, development, optimization, fabrication and characterization of Device C are described and discussed in detail, along with a descrip¬tion of process steps and component parts.

著录项

  • 作者

  • 作者单位
  • 年度 1962
  • 页码 1-112
  • 总页数 112
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工业技术;
  • 关键词

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