C- and Ku-Band Semiconductor TR Devices

摘要

All work performed on the Ku-band investigation during this period was concerned with full height Ke-band waveguide diode mounts. PIN and varactor diodes have been measured using forward DC bias to simulate high power isolation and zero bias to provide the low loss condition. Additional work has been carried out utilizing high burn out crystal detectors to provide the forward bias for the PIN and the varactor during high power tests. High power tests during this quarterly interval resulted in the successful operation of a two stage switched limiter. Operational data is given for peak powers up to 1,000 watts. (Author)