BURNOUT RESISTANT X BAND HOT CARRIER DETECTORS

摘要

Measurements were performed on .004" dia. N Type Silicon hot car¬rier detectors. These detectors were 3 to 14 db less sensitive than that predicted by theoretical analysis. Some detectors ex¬hibited a reversal in polarity when the RF power incident on the detector was increased from minimum detectable signal to approx¬imately 10 mw. The rectification phenomena exhibited by these devices can, in some instances, be related to the static E-I characteristics, but generally static considerations are not enough.nAll hot carrier diodes exhibited some degree of non-linearity. Efforts are being made to detect the sources of non-linearity with the objective of establishing the relationship, if any, be¬tween rectification and static characterization.