An Investigation of Surface States on Silicon Employing the MOS Capacitance Method

摘要

The MOS (metal-oxide- semiconductor) device was used to measure the density and position within the forbidden gap of surface states on silicon. The theory of the silicon space charge is discussed and an equation for this charge is derived, relating it to the voltage drop across the silicon. The MOS structure, fabrication, and variation of capacity with d. c. bias voltage are discussed. Experimental results are presented of the determination of surface state density versus position in the band gap.