Boron-Nitride High-Power Duplexing Device

摘要

The results of an experimental program to improve the power-handling capacity of duplexer devices through the use of an improved dielectric material are described. A dielectric container made of chemical-vapor-deposited (CVD) isotropic boron-nitride (BN) is substituted for the commonly used quartz envelope. A cylindrical pre-TR that failed because of high-temperature effects at a power level of 38 MW peak, 38 kW average, using a quartz envelope, operated satisfactorily at a power level of 65 MW peak, 65 kW average, with an isotropic CVD BN cylinder. The improvements in performance that can be achieved through the use of this material are significant in high-power duplexer applications. (Author)