Zero-Phonon Line Absorption Spectra of Radiation Damage Centers in Silicon

摘要

Infrared absorption measurements were made for n-type silicon samples irradiated with 1 MeV electrons at room temperature. The absorption spectra in the range 1-3 microns were recorded at both liquid nitrogen and liquid helium temperatures. Three families of zero-phonon lines and phonon-assisted sideband structure were seen which correspond to those seen in luminescence spectra. The families at 0.4891 eV and 0.7898 eV were seen only in pulled samples, while the family at 0.9702 eV was seen in both pulled and float-zone samples. A dose rate study indicated that all three families are independent of each other. The zero-phonon lines at 0.7898 eV, 0.7948 eV, and 0.4891 eV may follow of the divacancy. (Author)