Study of Heterojunction Pb(1-x)Sn(x)Te Diodes

摘要

A new procedure of using metal rich (Pb(1-x)Sn(x))(1+)Te alloy source in a graphite boat deposition method has been developed in preparing n-type Pb(0.8)Sn(0.2)Te thin films of carrier concentration in the low 10 to the 17th power/cc range without annealing. Using this procedure, single heterojunction Pb(1-x)Sn(x)Te diodes have been made by sequential depositions of p-type Pb(0.86)Sn(0.14)Te and n-type Pb(0.80)Sn(0.20)Te thin films on cleaved (100) KCL substrates. Diodes were made by using gold deposition and silver epoxy contacts. Rectifying diodes of (R sub o)A values as high as 600 ohm-sq cm have been obtained. A theoretical analysis was carried out in calculating the laser performance of a double heterojunction Pb(1-x)Sn(x)Te diodes. Its results will be used as guidelines for continuing experimental research and development. (Author)