Oxide Charge Trapping Induced by Ion Implantation Displacement Damage

摘要

Measurements have been made on the effects of ion implantation displacement damage and subsequent thermal annealing on charge transport and trapping within the SiO2 insulator of an MIS capacitor. Internal photoemission, current-voltage and capacitance-voltage measurements have been made in the temperature range between 80 and 300K. Prolonged thermal annealing was found to remove trap levels detectable with internal photoemission techniques but still left greater densities of electron traps in the oxide than those characteristic of unimplanted samples. These traps had an asymmetric spatial distribution within the oxide and may partially compensate for hole trapping under ionizing radiation and consequently be responsible for the improved radiation hardness reported for implanted MIS devices. (Author)