Mobile Central Switches (An Electron-Lithography Application).

摘要

Maximum density circuit fabrication techniques were applied to the fabrication of a 1024-bit random access memory based on a 2-transistor versatile memory/crosspoint switch cell of RADC design. Arranged as a 32word by 32bit matrix of cells on 20 x 24micron centers,the memory chip design includes address decoding for selective enabling of three control busses per word to permit operation of the device as a random access memory,associative memory, crosspoint switch,or sample and hold switch. A two micron minimum geometry design rule was followed. Fourteen memory circuits and 4test circuits were completed and the best units were mounted on ceramic carriers with 50-pin edge connectors. Static and dynamic tests of these devices showed operating transistors,decoders,and a memory word used for reset of data lines. Electron beam fabrication techniques were advanced during the program. (Modified author abstract)