Excess Capacitance and Non-Ideal Schottky Barriers on GaAs.

摘要

Non-ideal behavior in Schottky barriers on lightly doped and partially compensated semiconductors such as GaAs and CdS has been commonly observed (1-4). This behavior takes the form of (1) uncommonly large barrier heights in the forward-bias region, and (2) a non-linearity of curvature in the reverse-bias region of 1/sqC vs V plots.