Investigation of Interface States Using Metal-Oxide-Silicon Transistors and Pulse Gate Techniques. Volume II. Pulse Field Effects Measurements.

摘要

The pulsed field effect technique is a measurement of the surface conductance of a semiconductor under the influence of a transverse electric field and was used to investigate surface states and interface states at the silicon-oxide interfaces. The investigation studied whether the pulsed field effect technique could be used to detect fast interface and in regions close to the valence and conduction band edges. These states are able to exchange charge with the bands relatively fast, as compared to those which are closer to the center of the energy band gap. The effects of total ionizing radiation dose on interface state density and induced oxide charge were investigated. This work resulted in the development of a pulsed field effect technique which determines the interaction of fast interface states with the channel conductance of the MOSFET. It scans a portion of the silicon band gap not obtainable using any other simple interface state analysis technique. Data which indicate that there are correlations between interface state density before irradiation and the radiation induced oxide charge are presented. (Author)