Comparison of Site-Specific Densities of States of Ga and As in Cleaved and Sputtered GaAs(110) by Means of Auger Line Shapes

摘要

Site-specific densities of states for the Ga and As sites in GaAs (110) are derived from the M(1)M(45)V Auger lines and compared for the cleaved and sputtered surfaces. X-ray photoelectron spectroscopy, scanning electron microscopy, and LEED results for these surfaces are also presented. The results are interpreted in terms of a structure for the sputtered surface that consists of a two-phase mixture of Ga and disordered GaAs. (Author)