Development of Long Wavelength Single Longitudinal (SLM) Injection Laser Diodes

摘要

Development of Long Wavelength Single Longitudinal (SLM) Injection Laser Diodes emitting in the 1.3 micron region, utilizing a buried heterojunction BH structure. This final report describes efforts directed toward the development and optimization of these type devices and, in particular, concentrates on the following points: (1) Optimization of the double heterojunction DH structure; (2) Process development connected with the fabrication of buried heterojunction BH laser structures; (3) Modification BH laser structure and fabrication technique to optimize severe melt back; (4) Modification of the regrowth LPE technique to resolve melt back and the optimization of the N-P reverse bias junctions; and (5) Device performance. (Author)