Optimization Study of 256-Element IR-CCD

摘要

A 256-element platinum silicide Schottky-barrier IR-CCD line sensor, developed under a prior contract, was fabricated to a matrix of processing variations and mask modification in an effort to improve the performance of the device. A new device, tC1258, resulted from the optimization study. This report details the wafer fabrication and packaging by wafer lot of all devices processed as an aid to the sponsor in evaluating the arrays. (Author)