Determination of Yttrium in High Density Silicon Nitride by Emission and X-Ray Fluorescence Spectroscopy

摘要

Two spectrographic methods were developed for the determination of yttrium in high density yttrium-doped silicon nitride. The first method employs emission spectrographic techniques which compares a solution of the dissolved sample with that of aqueous synthetic standards. The second method uses energy dispersive X-ray fluorescence techniques to compare fusion buttons made from the samples with those fabricated from pure yttria and undensified silicon nitride. Synthetic standards were required in both methods because there were no available yttrium-densified silicon nitride standards. Seven samples were analyzed whose yttrium content ranged from two to sixteen weight percent. Data on results are furnished.