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Slider LPE of Hg(1-X)Cd(X)Te Using Mercury Pressure Controlled Growth Solutions

机译：使用汞压力控制生长溶液的Hg（1-X）Cd（X）Te的滑块LpE

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作者
Harman, T.;
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年度 1981
页码 p.1-17
总页数 17
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Single crystals; Liquid phases; Epitaxial growth; Cadmium tellurides; Mercury compounds; Control; Vapor pressure; Layers; Quality; Electron probes; Measurement; Reprints;

机译：单晶;液相;外延生长;碲化镉;汞化合物;控制;蒸气压;层;质量;电子探针;测量;重印;

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专利

1. Crystal growth of Cd1-xZnxTe and its use as a superior substrate for LPE growth of Hg0.8Cd0.2Te [J] . Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films . 1985,第1期

机译：Cd1-xZnxTe的晶体生长及其作为Hg0.8Cd0.2Te的LPE生长的优良衬底
2. Cd_(1-x)Zn_xTe crystal growth controlled by Cd/Zn partial pressures [J] . Wanwan Li, Wenbin Sang, Jihua Min Semiconductor science and technology . 2002,第10期

机译：Cd / Zn分压控制Cd_（1-x）Zn_xTe晶体的生长
3. Investigation of Multicarrier Transport in LPE-Grown Hg_(1-x)Cd_(x)Te Layers [J] . G.A. UMANA-MEMBRENO, J. ANTOSZEWSKI, L. FARAONE, Journal of Electronic Materials . 2010,第7期

机译：LPE生长的Hg_（1-x）Cd_（x）Te层中多载流子传输的研究
4. Growth and Characterization of Hg_(1-x)Cd_xTe Epilayers From Hg-rich Solution Using LPE [C] . Shiv Kumar, Anjana Nagpal, Sanjeev Sharma, International Workshop on the Physics of Semiconductor Devices . 2002

机译：使用LPE的HG_（1-X）CD_XTE脱落剂的生长和表征
5. Theoretical study and numerical simulations of the Hg(1-x)Cd(x)Te crystal growth by the traveling heater method [D] . Ye, Xing 1996

机译：Hg（1-x）Cd（x）Te晶体的行进加热法生长的理论研究和数值模拟
6. Nuclear Magnetic Resonance of 113Cd and 199Hg in Cd-Mg and Cd-Hg Solid Solutions [O] . V. V. Zhukov, I. D. Weisman, L. H. Bennett 1973

机译：Cd-Mg和Cd-Hg固溶体中113Cd和199Hg的核磁共振
7. Characteristics of HgCdTe epilayer grown by LPE using horizontal slider [O] . J K Radhakrishnan, S Sitharaman, S C Gupta 2014

机译：利用水平滑块生长LpE的HgCdTe外延层的特性
8. Optically Pumped LPE-Grown Hg(1-x)Cd(x)Te Lasers. [R] . Harman, T. C. 1978

机译：光泵浦LpE生长的Hg（1-x）Cd（x）Te激光器。

Slider LPE of Hg(1-X)Cd(X)Te Using Mercury Pressure Controlled Growth Solutions

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