Growth of High Purity Oxygen-Free Silicon by Cold Crucible Techniques

摘要

The goal of the program was to explore the feasibility of utilizing a cold crucible system for the growth of high purity, oxygen-free single crystals of silicon. The work included a detailed evaluation of previous research on cold crucible technology, the design and construction of a cold crucible assembly and the investigation of the growth of single crystals of high purity silicon utilizing the water-cooled cold crucible. In parallel with the experimental work, a theoretical analysis was carried out on the thermodynamics and heat flow characteristics within the melt confined in the cold crucible in an effort to develop a better understanding of the crystal growth process. The goals of the program have been achieved.