GaAs/GaAlAs Bipolar Heterojunction Gate Array

摘要

Several technological issues related to the development of GaAs bipolar heterojunction gate arrays were investigated experimentally using a test bar design tht consists of discrete transistors, three types of HI2L gates, and a prototype gate array with 114 internal gates and 25 I/O buffers. The preparation of submicrometer epitaxial films composed of AlGaAS and GaAs layers required for this development were also examined. Two methods of growing epitaxial films, OMCVD and MBE, were evaluated. It was concluded that although MBE is a slow process it is superior to OMCVD in providing uniform epitaxial films with controlled doping concentrations over large area wafers.