Computer Modeling of Thin Film Growth

摘要

The purpose of this thesis was to make a computer simulation of the vapor-deposition process in such a way as to give rise to an amorphous array of molecules with demonstrable anisotropy and void formations. A two dimensional, hard disk computer model was made which stimulates thin film growth. The model represents deposition molecules by hard disks, which are trajected at some angle to the substrate. At the substrate, the model assumes a limited mobility where incident molecules are captured upon contact and then allowed to move to the nearest rest pocket. The model monitors disk movement by organizing the deposition field into a 320 by 240 array. An analysis of nine different deposition angles shows that structural anisotropy and voids are a natural occurrence of the deposition process. The amount of unfilled space and the anisotropy can be linked to the deposition angle and mobility of the incident particles.