首页> 美国政府科技报告 >Low Threshold GaInAsP/InP Buried-Heterostructure Lasers with a Chemically Etched and Mass-Transported Mirror

【24h】

Low Threshold GaInAsP/InP Buried-Heterostructure Lasers with a Chemically Etched and Mass-Transported Mirror

机译：具有化学蚀刻和质量传输镜的低阈值GaInasp / Inp埋层异质结构激光器

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Liau, Z. L.; Walpole, J. N.; Tsang, D. Z.;
展开▼
作者单位

展开▼
年度 1984
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Mirrors; Laser components; Etching; Threshold effects; Low level; Gallium compounds; Arsenides; Indium phosphides; Mass transfer; Wafers; Quantum efficiency; Reprints;

机译：反射镜;激光器件;蚀刻;阈值效应;低电平;镓化合物;砷化物;磷化铟;传质;晶圆;量子效率;重印;

相似文献

外文文献
中文文献
专利

1. Characterization of mass-transported p-substrate GaInAsP/InP buried-heterostructure lasers with analytical solutions for electrical and thermal resistances [J] . Liau Z.L., Walpole J.N. IEEE Journal of Quantum Electronics . 1988,第1期

机译：利用电阻和热阻分析解决方案表征大量传输的p衬底GaInAsP / InP埋入异质结构激光器
2. Very low threshold current density 1.3 /spl mu/m InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers [J] . Kasukawa A., Yokouchi N. Electronics Letters . 1995,第20期

机译：极低的阈值电流密度1.3 / spl mu / m InAsP / InP / InGaP / InP / GaInAsP应变补偿多量子阱激光器
3. Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes [J] . Yoshifumi NISHIMOTO, Koji MIURA, Hideki YAGI, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2007,第1a3期

机译：通过低损伤工艺制造的低阈值电流密度GaInAsP / InP量子线分布式反馈激光器
4. Very low threshold current density 1.3 mu m INAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers [C] . A.Kasukawa, N.Yokouchi, N.Yamanaka, International symposium on compound semiconductors . 1996

机译：极低的阈值电流密度1.3μm INAsP / InP / InGaP / InP / GaInAsP应变补偿多量子阱激光器
5. GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers [D] . 宮本恭幸. 1988

机译：用于量子盒激光器的GaInAsP / InP有机金属气相外延（OMVPE）
6. A Low-Threshold Miniaturized Plasmonic Nanowire Laser with High-Reflectivity Metal Mirrors [O] . Jiahui Zheng, Xin Yan, Wei Wei, 2020

机译：具有高反射金属镜的低阈值小型化纳米线激光器
7. Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics and spontaneous emission factor [O] . Masayuki Fujita, Atsushi Sakai, Toshihiko Baba 1999

机译：超小和超低阈值GaInasp-Inp微盘注入激光器：设计，制造，激光特性和自发发射系数
8. Characterization of Mass-Transported p-Substrate GaInAsP/InP Buried-Heterostructure Lasers with Analytical Solutions for Electrical and Thermal Resistances [R] . Liau, Z. L., Walpole, J. N., Tsang, D. Z., 1988

机译：用电阻和热阻分析解表征质量传输的p-衬底GaInasp / Inp埋 - 异质结构激光器

Low Threshold GaInAsP/InP Buried-Heterostructure Lasers with a Chemically Etched and Mass-Transported Mirror

摘要

著录项

相似文献

相关主题

期刊订阅