Microphotoelectrochemical Etching of n-GaAs Using a Scanned Focused Laser

摘要

In this communication, we demonstrate high rate photoassisted etching of < 100 > (n+) -GaAs (Nd = 1.5 x 10 to the 18th power/cc, Laser Diode, Inc.) using a scanned focused laser. The etching solution is 10% aqueous KOH, in which oxidative dissolution of III-V compounds is mediated by holes. The process is accelerated in n-type crystals by holes provided by above bandgap light and the resulting photovoltage that develops between dark and illuminated regions.