High-Frequency GaAs Optical Guided-Wave Electrooptic Interferometric Modulator

摘要

The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 micrometers are presented. The interferometer consists of three-guide coupler input and ouput sections and single-mode p(+)-m(-)-M(+) slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of approx. 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices. (Author)