Monolithic GaAs/AlGaAs Diode-Laser/Deflector Devices for Light Emission Normal to the Surface

摘要

Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge emitting double heterostructure diode lasers with a monolithic 45 deg deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while the other facet was cleaved. Diode laser/deflector devices with two etched laser facets could be used to fabricate monolithic two dimensional laser arrays.