Workshop on 3-5 Semiconductor: Metal Interfacial Chemistry and Its Effect on Electrical Properties, November 3-5, 1986

摘要

This workshop discusses: The Thermodynamics of Bulk Metal: III-V Systems Related to Interfacial Chemistry; Thermodynamic Considerations of Metal-GaAs Reactions plus TEM Results; Chemistry of Ti: GaAs Interfaces; Questions Concerning Interfacial Chemistry, Equilibrium, and Electrical Properties; The Chemistry and Morphology of Metal/III-V Semiconductor Interfaces; Schottky Barriers on InP(110); Comparison to GaAs(110) Interface; Stables Phases at Reactive Metal/Compound Semiconductor Interfaces; Thermally Stable Ohmic Contact to n- type GaAs; Effects in Ohmic Contacts; Non Alloyed Ohmic Contacts by Solid State Reactions; Large Variations of GaAs Schottky Barrier Height by Interface Layers; Effects on Schottky Barriers of Metal Substitution in Semiconductors; III-V Interfaces: Schottky Barriers vs. Heterojunctions; A Comparison between Conventional and in-situ UHV Processing for Ge/GaAs and Co/GaAs Structures; Electrical Study of Schottky Barriers on Atomically Clean 3-5(110) Surfaces; A Comparison to the Results of Studies Using Surface Sensitive Techniques and Au-GaAs Ohmic Contacts; The Structures of Au/GaAs and A1/GaAs Interfaces; Refractory Silicide Contacts for Self-Aligned GaAs MESFETs; Heterojunction Growth and Impurity Incorporation During Vapor Growth of Compound Semiconductors; Reflection EXAFS Studies of Semiconductor-Metal Interfaces.