Laser Probing of Gallium Atom Interactions with Silicon (100) Surfaces

摘要

The interactions of gallium atoms with silicon (100) surfaces are studied with laser probing. Molecular-beam epitaxy (MBE) is a promising technique for growing high quality, low defect devices, especially those containing complex microstructures. This technique has been particularly useful for growing III-V materials such as gallium arsenide. In the past several years, there has been considerable interest in growing gallium arsenide devices on silicon substrates. However, very little is known about the fundamental interactions of gallium or arsenic beams with silicon surfaces. The present work was undertaken to understand the Ga-Si system better.