Electrical Contact to Semiconducting Samples for Use in the Diamond-Anvil Cell

摘要

Techniques are described for preparing electrical contacts to samples for measurements in the diamond-anvil high-pressure cell. Typical dimensions are 150 X 150 X 30 micrometers. Bulk, epitaxial, and multiple-quantum well (MQW) structures on GaAs and InP wafers have been successfully contacted. The techniques are also suitable for other experiments than those at high pressure, where miniaturization is important.