Self Consistent RF Discharge, Plasma Chemistry and Surface Model for Plasma Enhanced Chemical Vapor Deposition

摘要

A self consistent model for the plasma enhanced chemical deposition of thin films of amorphous hydrogenated silicon (a-Si:H) is presented. The model consists of three submodels for the electron kinetics, plasma chemistry, and surface deposition kinetics for a-Si:H deposited from radio frequency plasmas containing silane. Results from the model are discussed for a variety of discharge conditions, and recommendations are made for optimizing film properties. Plasma enhanced, Chemical vapor deposition, amorphous silicon, Modeling, Electron kinetics, Plasma chemistry, Deposition kinetics, Rf discharge, Silane, Film properties, Silicon. (Mjm)