Reliability of Gold Thin Film Conductors for Microelectronic Applications

摘要

The formation of holes in gold metallizations during thermal annealing can be prevented by thin indium or tin underlayers. Pulsed electromigration prolongs the lifetime of metallizations. This increase in lifetime is dependent on frequency and duty cycle. Aluminum films deposited by the ionized cluster beam technique have a substantially longer resistance against electromigration compared to conventionally deposited Aluminum films. Electrotransport, Thin films, Metallization, Reliability, Microelectronic circuits, Grain boundary grooving, ICB, Pulsed electromigration. (jes)