Pseudomorphic Ga0.51In0.49P/In0.15Ga0.85As/GaAs HIGFET's.

机译：假晶Ga0.51In0.49p / In0.15Ga0.85as / Gaas HIGFET。

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Ga0.51In0.49P/In0.15Ga0.85As HIGFET's were realized by MOCVD growth on Gallium ARSENATE substrates. This heterostructure system allows very high gate voltage operation with minimum gate leakage and cryogenic operation with very small threshold voltage shift. N an P channel devices were realized with a maximum intrinsic transconductance of 184 mS/mm and 74 mS/mm respectively.

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Chan, Y. J.; Pavlidis, D.; Razeghi, M.; Omnes, F.; Defour, M.;
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年度 1989
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Cryogenics; Gates(Circuits); Arsenates; Gallium; Growth(General); Operation; Reprints;

机译：低温;盖茨（电路）;砷酸盐;镓;生长（一般）;手术;重印;

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专利

1. Novel pseudomorphic InGaAs/AlGaAs SISFET and HIGFET structures for direct coupled FET logic [J] . Carline R.T., Morton C.G. Electronics Letters . 1991,第18期

机译：用于直接耦合FET逻辑的新型伪InGaAs / AlGaAs SISFET和HIGFET结构
2. Annealing effect on the optical properties in Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures [J] . Lee DY., Leem JY., Kang SK., Physica, E. Low-dimensional systems & nanostructures . 2003,第4期

机译：退火对掺Si的Al0.24Ga0.76As / In0.15Ga0.85As / GaAs伪晶型高电子迁移率晶体管结构中光学性能的影响
3. 0.2 mu m gate length pseudomorphic HIGFET using novel selfaligned TiPtAu/WN T-gate technology for high-speed digital and millimetre wave applications [J] . Fawaz H., Gest J. Electronics Letters . 1993,第7期

机译：采用新颖的自对准TiPtAu / WN T栅极技术的0.2μm栅极长度的伪HIGFET，适用于高速数字和毫米波应用
4. Multisubband Electron Mobility in Pseudomorphic Al0.3Ga0.7As/In0.15Ga0.85As Double Quantum Well based FET Structure [C] . Narayan Sahoo, Ramchandra Swain, Ajit K. Sahu, International Conference on Devices for Integrated Circuit . 2021

机译：伪形AL0.3GA0.7AS / IN0.15GA0.85AS中的多管电子迁移率/ IN0.15GA0.85AS基于双量子井的FET结构
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Selective reactive ion etching for short gate-length GaAs/AlGaAs/InGaAs pseudomorphic MODFETs [O] . A. A. Ketterson 2012

机译：栅极长度短的GaAs / AlGaAs / InGaAs伪变形MODFET的选择性反应离子刻蚀
8. Electronic Properties of Pseudomorphic InGaAs/AlGaAs (ON GaAs) and InGaAs/InAlAs (On InP) MODFET Structures [R] . Jaffe, M., Sekiguchi, Y., East, J., 1988

机译：假晶InGaas / alGaas（ON Gaas）和InGaas / Inalas（Inp）mODFET结构的电子特性

Pseudomorphic Ga0.51In0.49P/In0.15Ga0.85As/GaAs HIGFET's.

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