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Intersubband Absorption in Strained InxGa(1-x)As/Al(0.4)Ga(0.6)As(0 lesser than x lesser than 0.15) Multiquantum Wells

机译：应变InxGa（1-x）as / al（0.4）Ga（0.6）as（0小于x小于0.15）多量子阱的子带间吸收

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We report, for the first time, temperature-dependent inter subband absorption data in doped pseudomorphic In(x)Ga(1 - x)As/Al(0.4)Ga(0.6)As(0 < x < 0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6-7 micrometers for 50 A wells, which agrees extremely well with theoretical calculations. Keywords: Indium gallium arsenides; Aluminum gallium arsenides; Reprints. (AW)

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Haddad, G. I; Zhou, X.; Bhattacharya, P. K.; Hugo, G.; Hong, S. C.;
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年度 1989
页码 p.1-3
总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Absorption; Aluminum gallium arsenides; Arsenides; Computations; Gallium arsenides; Indium compounds; Reprints; Resonance absorption; Theory; Quantum electronics; Absorption spectra;

机译：吸收;砷化铝镓;砷化物;计算;砷化镓;铟化合物;重印;共振吸收;理论;量子电子学;吸收光谱;
入库时间 2022-08-29 11:23:16

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专利

1. MBE growth and optical properties of highly tensile-strained In_(1-x)Ga_xAs/In_(0.52)(Ga_(0.4)Al_(0.6))_(0.48)As multi-quantum-wells using digital alloy [J] . J.M. Kim, C.Y. Park, Y.T. Lee, Journal of Crystal Growth . 2006,第1期

机译：使用数字合金的高拉伸应变In_（1-x）Ga_xAs / In_（0.52）（Ga_（0.4）Al_（0.6））_（0.48）As多量子阱的MBE生长和光学性质
2. Growth of InP self-assembled quantum dots on strained and strain-relaxed In_x(Al_(0.6)Ga_(0.4))_(1-x)P matrices by metal-organic chemical vapor deposition [J] . X. B. Zhang, R. D. Heller, J. H. Ryou, Journal of Applied Physics . 2006,第4期

机译：金属有机化学气相沉积在应变和应变松弛的In_x（Al_（0.6）Ga_（0.4））_（1-x）P矩阵上生长InP自组装量子点
3. Characteristics of short-wavelength (617> lambda >640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers [J] . Bour D.P., Treat D.W. IEEE Photonics Technology Letters . 1992,第10期

机译：短波长（617>λ> 640 nm）Ga / sub 0.4 / In / sub 0.6 / P /（Al / sub x / Ga / sub 1-x /）/ sub 0.5 / In / sub 0.5 / P应变的特性薄的多量子阱激光器
4. Low Threshold Ga/sub x/ln/sub 1-x/P(X=0.4, 0.6)/(AI/sub x/Ga/sub 1-x/)/sub 0.5/ln/sub 0.5/P Strained Quantum Well Layers [C] . Bour, D.F., Treat, . 2001

机译：低阈值Ga / sub x / ln / sub 1-x / P（X = 0.4，0.6）/（AI / sub x / Ga / sub 1-x /）/ sub 0.5 / ln / sub 0.5 / P应变量子阱层数
5. Optical properties of cadmium-tellurium/cadmium(1-x)manganese(x)tellurium multiquantum wells. [D] . Chang, Soo-Kyung. 1988

机译：镉-碲/镉（1-x）锰（x）碲多量子阱的光学性质。
6. The sintering temperature effect on electrochemical properties of Ce0.8Sm0.05Ca0.15O2-δ (SCDC)-La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) heterostructure pellet [O] . Xiyu Nie, Ying Chen, Naveed Mushtaq, 2019

机译：烧结温度对Ce0.8Sm0.05Ca0.15O2-δ（SCDC）-La0.6Sr0.4Co0.2Fe0.8O3-δ（LSCF）异质团粒电化学性能的影响
7. (1 − x)BaTi0.5Mn0.5O3 + (x)Ni0.6Zn0.4Fe1.85Sm0.15O4 composite multiferroics: Analyzing the customizing effect on conductive and magnetic properties of BaTi0.5Mn0.5O3 by substituting Ni0.6Zn0.4Fe1.85Sm0.15O4 at different concentrations [O] . I. N. Esha, K. N. Munny, M. N. I. Khan, 2020

机译：（1 - x）BTI0.5MN0.5O3 +（x）Ni0.6zn0.4Fe1.85SM0.15O4复合多法学：通过代替Ni0.6Zn0.4Fe1.85sm0分析BATI0.5MN0.5O3的导电和磁性性能的定制效果.15O4以不同的浓度
8. Photoluminescence studies of InxGa(1-x)As/AlyGa(1- y)As strained-layer structures. Effects of annealing. [R] . Jones, E. D., Dawson, L. R., Klem, J. F., 1990

机译：InxGa（1-x）as / alyGa（1-y）作为应变层结构的光致发光研究。退火的影响。

Intersubband Absorption in Strained InxGa(1-x)As/Al(0.4)Ga(0.6)As(0 lesser than x lesser than 0.15) Multiquantum Wells

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