PEMOCVD Ferroelectric Nonvolatile Radiation-Hard Memories. Phase 1.

摘要

The purpose of this Phase I effort was to determine the feasibility of depositing ferroelectric lead zirconium titanium oxide (PZT) thin films using plasma enhanced-metalorganic chemical vapor deposition (PEMOCVD). To obtain PZT films that are useful for integrated circuit ferroelectric memories, the films should be deposited directly in the perovskite phase at the lowest possible substrate temperatures. This would circumvent problems from high temperature deposition and annealing that have hindered development of ferroelectric thin films devices. These problems include thermally induced strain in the films and incompatibility with standard semiconductor processing.