Improved 320x244 - Element PtSi Schottky - Barrier IR-CCD Image Sensor.

摘要

This report describes the design, fabrication, and performance of an improved 320x 244-element IR-CCD imager with PtSi Schottky barrier detectors. The imager has 40mm x 40 mm pixels, and a 44% fill factor. Metal silicide photodiode array technology was invented at Rome Air Development Center (RADC) Hanscom AFB, MA, and has been under development there since the early 1970's. In 1973, Shepherd and Yang proposed silicide Schottky barrier detector (SBD) arrays for infrared thermal imaging. The objectives of the work described in the present report were to design and fabricate an improved version of the 320 x 244-element PtSi array using beneficial design and process changes inferred from test results on the TA13401B device. This report describes the design, fabrication, and performance of this array (TA14804A).