High-Performance 801 x 512-Element PtSi Scheottky-Barrier infrared Image Sensor

摘要

A high-performance 801 x 512-element PtSi Schottky-barrier infrared image sensor has been developed with an enhanced Charge Sweep Device (CSD) readout architecture. In the enhanced CSD, the power consumption of the CSD has been reduced by employing a multiphase CSD with an on-chip multiphase CMOS clock generator. Flexible vertical scan is also possible using a newly developed transfer gate scanner. A large fill factor of 61/100 is obtained in spite of the small pixel size of 17 x 20μm~2.