128 X 128 element PtSi infrared CCD image sensor

摘要

A new 128 x 128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector struc-ture has been fabricated, which has 50 μm x 50 μm pixels, a fill factor of 40 percent, the nonuniformity of 5 % or less and the dynamic range of over or equal to 50 dB. The noise equivalent temperature difference is 0. 2 K with f/1. 0 optics at 300 K background. In this paper, the principle of operation, design consideration and fabrication technology for the device are described.