Large-Area, Plasma-Assisted, Halogen-Based Diamond Deposition

摘要

A number of chemical systems have been evaluated for diamond growth in theparallel plate capacitive systems. Unlike previous work in the rf inductive systems, diamond growth from H2/CH4, H2/CHI, and H2O/CH3 OH systems in the parallel plate was not forthcoming. Analysis of the critical differences between the rf inductive vs rf capacitive coupling identified the plasma density and the degree of plasma dissociation to be the substantial differences. We have embarked