Electron and Hole Real Space Transfer in InAlAs/InGaAs Heterostructure Device

摘要

We report a detailed experimental analysis of both electron and hole Real SpaceTransfer occurring in InAlAs/InGaAs heterostructure devices grown on InP. At high drain-source voltages electrons are heated and holes are created by impact ionization. Both electrons and holes contribute to the gate current whereas the relative size of these contribution depends on the magnitude and polarity of the bias applied to the control and to the drain electrode.