Photovoltaic Effects in GaN Structures with p-n Junctions

摘要

Large-area GaN photovoltaic structures with p-n junctions have been fabricatedusing atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral