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Synthesis and photoluminescence property of silicon carbon nanowires synthesized by the thermal evaporation method

机译:热蒸发法合成硅碳纳米线的合成及光致发光性能

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摘要

The purity of beta-SiC nanowires is raised obviously by using an ordered nanoporous anodic aluminum oxide template by the thermal evaporation method without any metal catalyst. The microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that the synthesized products mainly consist of nanowires, which are single-crystalline beta-SiC with diameters of about 50 nm and tens of micrometers long. The nanowires axes lie along the < 111 > direction and possess a high density of planar defects. The beta-SiC nanowires exhibit the strong photoluminescence peaks at wavelength 400 nm, which is significantly shifted to the blue compared with the reported luminescence results of SiC materials. The blueshift may be ascribed to morphology, quantum size confinement effects of the nanomaterials and abundant structure defects that existed in the nanowires. Finally, the growth mechanism of SiC nanowires and the effect of anodic aluminum oxide template are also analyzed and discussed.
机译:通过使用有序的纳米多孔阳极氧化铝模板,通过热蒸发法,无需任何金属催化剂,可以明显提高β-SiC纳米线的纯度。通过扫描电子显微镜,能量色散X射线光谱,X射线衍射和高分辨率透射电子显微镜对显微组织进行了表征。结果表明,合成产物主要由纳米线组成,纳米线为单晶β-SiC,直径约为50 nm,长度为数十微米。纳米线轴沿<111>方向放置,并具有高密度的平面缺陷。 β-SiC纳米线在400 nm波长处显示出很强的光致发光峰,与所报道的SiC材料的发光结果相比,该峰明显偏蓝。蓝移可归因于纳米材料的形态,量子尺寸限制效应和纳米线中存在的大量结构缺陷。最后,对SiC纳米线的生长机理和阳极氧化铝模板的作用进行了分析和讨论。

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