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Quasi-two-dimensional carriers in dilute-magnetic-semiconductor quantum wells under in-plane magnetic field

机译:平面磁场下稀磁半导体量子阱中的准二维载流子

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摘要

Due to the competition between spatial and magnetic confinement, the density of states (DOS) of a quasi-two-dimensional system deviates from the ideal step-like form both quantitatively and qualitatively. We study how this affects the spin-subband populations and the spin polarization as functions of the temperature, T, and the in-plane magnetic field, B, for narrow to wide dilute-magnetic-semiconductor quantum wells (QWs). We focus on the QW width, the magnitude of the spin-spin exchange interaction, and the sheet carrier concentration dependence. We look for ranges where the system is completely spin polarized. Increasing T, the carrier spin splitting, U-0 sigma, decreases, while on increasing B, U-0 sigma increases. Moreover, due to the DOS modification, all energetically higher subbands become gradually depopulated. (C) 2007 Elsevier B.V. All rights reserved.
机译:由于空间和磁场限制之间的竞争,准二维系统的状态密度(DOS)在数量和质量上都偏离了理想的阶梯状形式。对于窄到宽的稀磁半导体量子阱(QW),我们研究了温度(T)和平面内磁场(B)对温度的自旋子带数量和自旋极化的影响。我们关注的是QW宽度,自旋-自旋交换相互作用的幅度以及薄片载流子浓度的依赖性。我们寻找系统完全自旋极化的范围。 T增大,载流子自旋分裂U-0 sigma减小,而B增大,U-0 sigma增大。此外,由于DOS的修改,所有能量较高的子带将逐渐减少。 (C)2007 Elsevier B.V.保留所有权利。

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