Characteristics of three-junction electromechanical single electron transistor at zero temperature

摘要

In the single electron transistor, multiple-junction devices have different properties with two-junction devices. We investigate a model system of three-junclion electromechanical single electron transistor at zero temperature. Comparing with two-junction electromechanical single electron transistor, the island movement has a greater influence on the electron tunneling. The current-drain voltage (I-DS-V-D) curve also has Coulomb Staircase phenomena. However, the conductance decreases with the increase of VG. A simple and effective method is applied to estimate the trend of the current curves, by analyzing the average electrostatic forces. (c) 2005 Elsevier B.V. All rights reserved.