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Near-infrared tunable narrow filter properties in a 1D photonic crystal containing semiconductor metamaterial photonic quantum-well defect

机译:包含半导体超材料光子量子阱缺陷的一维光子晶体中的近红外可调窄滤光片特性

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The near-infrared (NIR) narrow filter properties in the transmission spectra of a one-dimensional photonic crystal doped with semiconductor metamaterial photonic quantum-well defect (PQW) were theoretically studied. The behavior of the defect mode as a function of the stack number of the PQW defect structure, the filling factor of semiconductor metamaterial layer, the polarization and the angle of incidence were investigated for Al-doped ZnO (AZO) and ZnO as the semiconductor metamaterial layer. It is found that the frequency of the defect mode can be tuned by variation of the period of the defect structure, polarization, incidence angle, and the filling factor of the semiconductor metamaterial layer. It is also shown that the number of the defect mode is independent of the period of the PQW defect structure and is in sharp contrast with the case where a common dielectric or metamaterial defect are used. The results also show that for both polarizations the defect mode is red-shifted as the number of the defect period and filling factor increase. An opposite trend is observed as the angle of incidence increases. The proposed structure could provide useful information for designing new types of tuneable narrowband filters at NIR region. (C) 2015 Published by Elsevier B.V.
机译:从理论上研究了掺杂半导体超材料光子量子阱缺陷(PQW)的一维光子晶体在透射光谱中的近红外(NIR)窄滤光片特性。对于掺铝的ZnO(AZO)和作为半导体超材料的ZnO,研究了缺陷模式的行为与PQW缺陷结构的堆叠数,半导体超材料层的填充因子,极化和入射角的关系。层。发现缺陷模式的频率可以通过缺陷结构的周期,极化,入射角和半导体超材料层的填充因子的变化来调节。还显示出缺陷模式的数量与PQW缺陷结构的周期无关,并且与使用普通电介质或超材料缺陷的情况形成鲜明对比。结果还表明,对于两种极化,缺陷模式随着缺陷周期数和填充因子的增加而红移。随着入射角的增加,观察到相反的趋势。所提出的结构可以为在NIR区域设计新型可调谐窄带滤波器提供有用的信息。 (C)2015由Elsevier B.V.发布

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